? 2000 ixys all rights reserved 1 - 2 features ? package with copper base plate isolation voltage 3000 v~ planar passivated chips low forward voltage drop 1/4" fast-on power terminals applications supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors advantages easy to mount with two screws space and weight savings improved temperature and power cycling capability small and light weight dimensions in mm (1 mm = 0.0394") data according to iec 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. ixys reserves the right to change limits, test conditions and dimensions. v rsm v rrm type v dsm v drm vv 800 800 xxx 55-08io7 1200 1200 xxx 55-12io7 1400 1400 xxx 55-14io7 1600 1600 xxx 55-16io7 xxx = type i dav = 53 a v rrm = 800-1600 v symbol test conditions maximum ratings i dav t k = 85c, module 53 a i davm module 53 a i frms , i trms per leg 41 a i fsm , i tsm t vj = 45c; t = 10 ms (50 hz), sine 550 a v r = 0 v t = 8.3 ms (60 hz), sine 600 a t vj = t vjm t = 10 ms (50 hz), sine 500 a v r = 0 v t = 8.3 ms (60 hz), sine 550 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 1520 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 1520 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 1250 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 1250 a 2 s (di/dt) cr t vj = 125c repetitive, i t = 50 a 150 a/ s f = 50 hz, t p = 200 s v d = 2/3 v drm i g = 0.3 a, non repetitive, i t = 1/2 i dav 500 a/ s di g /dt = 0.3 a/ s (dv/dt) cr t vj = t vjm ; v dr = 2/3 v drm 1000 v/ s r gk = ; method 1 (linear voltage rise) v rgm 10 v p gm t vj = t vjm t p = 30 s 10 w i t = i tavm t p = 500 s 5w t p = 10 ms 1w p gavm 0.5 w t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m5) 5 15 % nm (10-32 unf) 44 15 % lb.in. weight 110 g preliminary data vhf 55 vho 55 vko 55 vkf 55 vgo 55 single phase rectifier bridge vhf 55 vho 55 vkf 55 vgo 55 vko 55
? 2000 ixys all rights reserved 2 - 2 symbol test conditions characteristic values i d , i r t vj = t vjm ; v r = v rrm ; v d = v drm 5ma v t i t = 80 a; t vj = 25c 1.64 v v t0 for power-loss calculations only 0.85 v r t 11 m v gt v d = 6 v; t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v; t vj = 25c 100 ma t vj = -40c 200 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd 5ma i l t vj = 25c; t p = 10 s 450 ma i g = 0.45 a; di g /dt = 0.45 a/ s i h t vj = 25c; v d = 6 v; r gk = 200 ma t gd t vj = 25c; v d = 1/2 v drm 2 s i g = 0.45 a; di g /dt = 0.45 a/ s t q t vj = t vjm ; i t = 20 a, t p = 200 s; di/dt = -10 a/ s typ. 250 s v r = 100 v; dv/dt = 15 v/ s; v d = 2/3 v drm r thjc per thyristor / diode; dc 0.9 k/w per module 0.18 k/w r thjk per thyristor / diode; dc 1.1 k/w per module 0.22 k/w d s creeping distance on surface 16.1 mm d a creepage distance in air 7.1 mm a max. allowable acceleration 50 m/s 2 vhf55 VHO55 vko55 vkf55 vgo55
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